lead-free green ds30514 rev. 6 - 2 1 of 4 dpBT8105 www.diodes.com diodes incorporated dpBT8105 1a pnp surface mount transistor epitaxial planar die construction ideal for medium power amplification and switching high collector current rating complementary version available (dnBT8105) lead free by design/rohs compliant (note 2) "green device" (note 3) qualified to aec-q101 standards for high reliability characteristic symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current - continuous i c -1 a peak pulse collector current i cm -2 a operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c c h g d k b e mechanical data case: sot-23 case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram marking (see page 2): k82 ordering & date code information: see page 4 weight: 0.008 grams (approximate) notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. e b c sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm thermal characteristics @ t a = 25 c unless otherwise specified characteristic symbol typ max unit power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w new product
ds30514 rev. 6 - 2 2 of 4 dpBT8105 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -80 v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5 v i e = -100 a, i c = 0 collector cutoff current i cbo -100 na v cb = -60v, i e = 0 collector cutoff current i ces -100 na v ces = -60v emitter cutoff current i ebo -100 na v eb = -4v, i c = 0 on characteristics (note 4) dc current gain h fe 100 100 80 30 300 v i c = -1ma, v ce = -5v i c = -500ma, v ce = -5v i c = -1a, v ce = -5v i c = -2a, v ce = -5v collector-emitter saturation voltage v ce(sat) -0.3 -0.6 v i c = -500ma, i b = -50ma i c = -1a, i b = -100ma base-emitter saturation voltage v be(sat) -1.2 v i c = -1a, i b = -100ma base-emitter turn on voltage v be(on) -1.0 v i c = -1a, v ce = -5v small signal characteristics output capacitance c obo 12 pf v cb = -10v, f = 1.0mhz current gain-bandwidth product f t 150 mhz v ce = -10v, i c = -50ma, f = 100mhz note: 4. short duration pulse test used to minimize self-heating effect. 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs ambient tem p erature a 150 200 250 300 350 0 0 100 150 200 50 4 00 350 300 250 -1 -10 -1000 -10,000 -100 h , dc current gain fe i , collector current (ma) fig. 2, dc current gain vs collector current c v = -5v ce t = 25oc a t = 85oc a t = 125oc a t = -55oc a new product typical characteristics
ds30514 rev. 6 - 2 3 of 4 dpBT8105 www.diodes.com v, (mv) ce (sat) collector to emitter saturation voltage i , collector current (ma) fig. 4, collector-emitter saturation voltage vs collector current c -1 -10 -100 -1000 0 -50 -100 -300 - 3 5 0 -150 -200 -250 i/i =10 cb t = -55oc a t = 25oc a t = 85oc a t = 125oc a 0 -0.2 -0.4 - 1 .4 -1.2 -0.6 -0.8 -1 -1 -10 -100 -1000 -10,000 v , base to emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 3, c base-emitter saturation voltage vs. collector current i/i =10 cb t = 25oc a t = 85oc a t = 125oc a t = -55oc a 0 -0.2 -0.4 -0.6 - 1 . 2 -1 -0.8 -1 -10 -100 -1000 -10,000 v , base emitter voltage (v) be(on) i , collector current (ma) fig. 6, base- c emitter voltage vs. collector current t = 125oc a v = -5v ce t = -55oc a t = 25oc a t = 85oc a 0 -100 -200 -700 -800 - 900 -600 -300 -400 -500 v , collector to emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 5, collector- c emitter saturation voltage vs. collector current -1 -10 -100 -1000 i/i =10 cb i/i =50 cb t = 25oc a capacitance (pf) v , reverse voltage (v) fi g .7, r capacitance vs. reverse volta g e 0 20 40 60 80 100 120 0 5 10 15 20 cobo cibo f=1mhz new product
ds30514 rev. 6 - 2 4 of 4 dpBT8105 www.diodes.com ordering information device packaging shipping dpBT8105-7 sot-23 3000/tape & reel note: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information k82 ym k82 = product type marking code ym = date code marking y = year ex: s = 2005 m = month ex: 9 = september date code key year 2004 2005 2006 2007 2008 2009 code rs tuvw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd (note 5) new product important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of diodes incorporated.
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